630A-252

GOFORD 630A Description Features VDSS RDS(ON) ID 0.21Ω 9A @ 10V (typ) 200V TO-252 • Fast switching TO-251 • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive Absolute Maximum Ratings TC=25℃ Symbol unless otherwise specified Max. Parameter TO-251/TO-252 Units VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage ± 30 V ID Continuous Drain Current TC = 25℃ 9 A TC = 100℃ 5.83 A 36 A 320 mJ 5 V/ns IDM EAS dv/dt PD Pulsed Drain Current note1 Single Pulsed Avalanche Energy Peak Diode Recovery Energy note2 note3 Power Dissipation TC = 25℃ 83 W Linear Derating Factor TC > 25℃ 0.67 W/℃ 1.5 ℃/W -55 to +150 ℃ RθJC Thermal Resistance, Junction to Case TJ, TSTG Operating and Storage Temperature Range *Drain current limited by maximum junction temperature HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 1 GOFORD 630A Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise specified Test Condition Min. Typ. Max. Units 200 - - V - 0.25 - V/℃ VDS = 200V, VGS = 0V - - 1 µA VDS = 160V, TC = 125℃ - - 10 µA VDS = 0V, VGS = ±30V - - ±100 nA Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V,ID = 250µA △V(BR)DSS Breakdown Voltage Temperature Reference to 25℃, /△TJ Coefficient ID = 250µA IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current On Characteristics VGS(th) Gate Threshold Voltage note4 VDS = VGS, ID = 250µA 2 - 4 V RDS(on) Static Drain-Source On-Resistance VGS =10V, ID = 4.5A - 0.21 0.25 Ω gFS Forward Transconductance VDS =30V, ID = 4.5A - 9.2 - S - 509 - pF - 51.5 - pF - 3.2 - pF - 11.8 - nC - 2.36 - nC - 3.98 - nC - 10.33 - ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 160V, ID = 9A, VGS = 10V Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time VDD = 100V, ID = 9A, - 10.7 - ns td(off) Turn-Off Delay Time RG = 10Ω, VGS = 10V - 29.1 - ns tf Turn-Off Fall Time - 11.1 - ns Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 9 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 36 A VSD Drain to Source Diode Forward Voltage VGS = 0V, IS = 9A - - 1.4 V trr Reverse Recovery Time VGS = 0V, IF = 9A, - 201 - ns Qrr Reverse Recovery Charge di/dt =100A/µs - 663 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 10mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse width ≤ 300µs; duty cycle ≤ 2%. HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 2 GOFORD 630A Typical Performance Characteristics 25 25 15 25℃ 20 ID,Drain Current,A 20 ID,Drain Current,A PULSED TEST VDS = 30V VGS = 10.0V 7.5V 5.0V 4.5V 4.0V 3.5V 10 5 15 150℃ 10 5 0 0 10 20 0 30 0 2 VDS,Drain-to-Source Voltage,V 4 6 8 10 VGS,Gate-to-Source Voltage,V Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.2 PULSED TEST VGS = 0V 10 1.0 ISD,Reverse Drain Current,A RDS(on) ,Drain-to-Source On Resistance,Ω PULSED TEST VGS = 10V 0.8 0.6 0.4 VGS = 20V 0.2 0 10 20 30 40 150℃ 25℃ 1 0.1 50 0.3 0.4 0.5 ID,Drain Current,A 0.6 0.7 0.8 0.9 1 1.1 1.2 VSD,Source-to-Drain Voltage,V Figure 3. Drain-to-Source On Resistance vs. Figure 4. Body Diode Forward Voltage vs. Drain Current and Gate Voltage Source Current and Temperature 10000 Ciss Capacitance,pF 1000 100 10 Coss f = 1MHz Ciss = Cgs+Cgd Coss = Cds+Cgd Crss = Cgd Crss VGS,Gate-to-Source Voltage,V 10 VDS = 160V VDS = 100V VDS = 40V 8 6 4 2 ID = 9A 1 0 0.1 1 10 100 0 2 Figure 5. Capacitance Characteristics 4 6 8 10 12 QG,Total Gate Charge,nC VDS,Drain-to-Source Voltage,V Figure 6. Gate Charge Characteristics HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 3 GOFORD 630A 3 1.2 PULSED TEST VGS = 10V ID = 4.5A RDS(on),(Normalized) Drain-to-Source On Resistance BVDSS,(Normalized) Drain-to-Source Breakdown Voltage 2.5 1.1 1 0.9 0.8 -100 -50 0 50 100 150 2 1.5 1 0.5 0 -100 200 -50 0 50 100 150 200 TJ,Junction Temperature(℃) TJ,Junction Temperature(℃) Figure 7. Normalized Breakdown Voltage vs. Figure 8. Normalized On Resistance vs. Junction Temperature Junction Temperature 10 100 9 10µs 8 100µs 7 ID,Drain Current,A ID,Drain Current,A 10 1ms 10ms 1 Operation in This Area is Limited by RDS(on) DC 0.1 6 5 4 3 2 SINGLE PULSE TC=25℃ 1 0 0.01 1 10 100 0 1000 25 50 VDS,Drain-to-Source Voltage,V ZθJC,Transient Thermal Impedance,℃/W Figure 9. Maximum Safe Operating Area for RU9N20A 1 75 100 125 150 TC,Case Temperature,℃ Figure 10. Maximum Continuous Drain Current vs. Case Temperature D=0.50 0.20 0.10 0.05 0.1 0.02 0.01 Notes: 1.Duty Factor D = t1/t2 2.Peak Tj = Pdm x Zthjc + Tc SINGLE PULSE (THERMAL RESPONSE) 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 t,Pulse Duration,s 1.0E-01 1.0E+00 1.0E+01 Figure 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case for RU9N20A HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 4 GOFORD 630A Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 5 GOFORD 630A Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 6